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| IL350/351/358/359 HIGH PERFORMANCE LINEAR OPTOCOUPLER for Optical DAA in Telecommunications Preliminary Data Sheet Package Dimensions in Inches (mm) K1 A2 8 7 6 5 K A N.C N.C FEATURES * 2 mm High SMT Package * High Sensitivity (K1) at Low Operating LED Current * Couples AC and DC Signals * Low Input-Output Capacitance * Isolation Voltage, 2500 VRMS * Low Distortion APPLICATIONS * Optical DAA for V.34 FAX/Modem PCMCIA Cards * Digital Telephone Line Isolation DESCRIPTION The IL350/1/8/9 family of Linear Optocoupler consist of an IRLED optically coupled to two photodiodes. The emitter mechanically faces both diodes enabling them to receive approximately an equal amount of infrared light. The diodes produce a proportional amount of photocurrents. The ratio of the photocurrents stays constant with high accuracy when either the LED current changes or the ambient temperature changes. Thus one can control the output diode current optically by controlling the input photodiode current. The IL350/1/8/9 optocouplers can be used with the aid of operational amplifiers in closed loop conditions to achieve highly linear and electrically isolated AC and or DC signal amplifiers. .224 (5.7) .346 (8.79) .216 (5.5) .326 (8.3) Pin One ID K3 A4 .230 (5.84) .224 (5.69) .017 (.43) .013 (.33) .047 (1.19) .037 (.94) .083 (2.1) .075 (1.9) .040 (1.02) .036 (.91) .050 (1.27) Typ. .016 (.41) Typ. .006 (.15) .301 (7.65) .281 (7.14) 40 3-7 10 Typ. All 8 sides Absolute Maximum Ratings Emitter Reverse Voltage Forward Current Surge Current Pulse Width <10 s Power Dissipation, TA=25C Dearate Linearly from 25C Junction Temperature Detector (each) Reverse Voltage Power Dissipation Derate Linearly from 25C Junction Temperature Coupler Isolation Test Voltage Total Package Power Dissipation Derate Linearly from 25C Storage Temperature Operating Temperature Lead Soldering Time at 260C Isolation Resistance VIO=500 V, TA=25C VIO=500 V, TA=100C 5-109 Sym VR IF IPK PLED TJ VR P TJ VISOL Pt TS TOP Min. Max. 3 30 150 150 2 100 Units V mA mA mW mW/C C 15 50 0.65 100 V mW mW/C C 2500 250 2.8 -40 0 150 75 10 1012 1011 VRMS mW mW/C C C sec. Electrical Characteristics (TA=25C) LED Emitter Forward Voltage Reverse Current VF Temperature Coefficient Junction Capacitance Dynamic Resistance Switching Time IL358/9 Symbol VF IR VF/C CJ VF/IF tF tR Detector Junction Capacitance NEP AC Characteristics Photovoltaic Mode Frequency Response Phase Response Rise Time Package Input-Output Capacitance Common Mode Capacitance CIO Ccm 1 0.5 pF pF VF=0 V, f=1 MHz VF=0 V, f=1 MHz K3 Bins Max. A-J D, E, F, G D, E, F, G E, F IL358/9 BW(-3dB) 1.0 45 350 MHz Deg. ns IP1=25 A Modulation current IP1= 6 A CJ 12 <4-14 pF W/Hz VF=0 V, f=1 MHz VDET=0 V Min. Typ. 1.8 .01 -2.2 TBD 6 40 40 Max. 2.1 10 Units V A mV/C pF W ns ns IF=2.5 mA IF=1 mA VF=0 V, f=1 MHz Test Conditions IF=10 mA VR=3 V Coupled Characteristics K1 at IF=2 mA, VD=0 V Min. IL350 IL351 IL358 IL359 0.003 0.005 0.008 0.008 Typ. Bin Table Bin A B C D E F G H I J Min. 0.557 0.620 0.690 0.765 0.851 0.945 1.051 1.169 1.297 1.442 Max. 0.626 0.696 0.773 0.859 0.955 1.061 1.181 1.311 1.456 1.618 5-110 IL350/351/358/359 |
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